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400V
57A
APT40M70B2VFR
*G
APT40M70LVFR
0.070
APT40M70B2VFRG* APT40M70LVFRG*
Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V
(R)
FREDFET
B2VFR
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout.
T-MAXTM
TO-264
LVFR
* T-MAXTM or TO-264 Package * Faster Switching * Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
* Avalanche Energy Rated * FAST RECOVERY BODY DIODE
G
D
S
All Ratings: TC = 25C unless otherwise specified.
APT40M70B2_LVFR(G) UNIT Volts Amps
400 57 228 30 40 520 4.16 -55 to 150 300 57 50
4 1
Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
400 57 0.070 250 1000 100 2 4
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms A nA Volts
3-2006 050-5850 Rev A
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT40M70B2_LVFR(G)
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 57A @ 25C VGS = 15V VDD = 200V ID = 57A @ 25C RG = 0.6 MIN TYP MAX UNIT
7410 1140 450 330 40 125 16 16 55 5
8890 1600 675 495 40 190 32 32 80 10
ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns C Amps
57 228 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
(Body Diode) (VGS = 0V, IS = -57A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -57A, di/dt = 100A/s) Reverse Recovery Charge (IS = -57A, di/dt = 100A/s) Peak Recovery Current (IS = -57A, di/dt = 100A/s)
250 500 1.6 5.5 15 27
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.24 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 1.54mH, RG = 25, Peak IL = 57A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID57A di/dt 700A/s VR 400V TJ 150C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
, THERMAL IMPEDANCE (C/W)
D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 0.02 0.01 SINGLE PULSE Note:
PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2
3-2006
050-5850 Rev A
Z
JC
0.001 10-5
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
10
Typical Performance Curves
100
APT40M70B2_LVFR(G)
100
VGS=6V, 7V, 10V & 15V
VGS=15V
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
80
80
VGS=10V
VGS=6V & 7V
5.5V
5.5V
60 5V 40 4.5V 4V 0 0 50 100 150 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
60
5V
40
20
20
4.5V
4V
0
0 2 4 6 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
TJ = -55C
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
100
1.8
V
GS
ID, DRAIN CURRENT (AMPERES)
80
TJ = +25C
TJ = +125C
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
1.6
60
1.4
40
1.2
VGS=10V
VGS=20V
20
TJ = +125C
TJ = +25C
TJ = -55C
1.0
0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 60
0
0.8
0
40 80 120 160 200 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
ID, DRAIN CURRENT (AMPERES)
50 40 30 20 10 0
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
25
I
D
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
0.90
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6
-50
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
2.5
= 0.5 I V
GS
D
[Cont.]
= 10V
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
-25
050-5850 Rev A
3-2006
APT40M70B2_LVFR(G)
300
ID, DRAIN CURRENT (AMPERES)
100 50
OPERATION HERE LIMITED BY RDS (ON)
10S 100S
30,000
10,000
C, CAPACITANCE (pF)
Ciss
1mS
5,000 Coss 1,000 500 Crss
10 5
10mS 100mS DC
1 .5
TC =+25C TJ =+150C SINGLE PULSE
.1
1 5 10 50 100 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
200 100 50 TJ =+150C TJ =+25C
16
VDS=80V
VDS=200V
12
VDS=320V
8
10 5
4
100 200 300 400 500 600 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
T-MAXTM (B2) Package Outline (B2VFR)
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098)
TO-264 (L) Package Outline (LVFR)
e1 SAC: Tin, Silver, Copper
4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079)
15.49 (.610) 16.26 (.640)
5.38 (.212) 6.20 (.244)
19.51 (.768) 20.50 (.807)
3.10 (.122) 3.48 (.137)
5.79 (.228) 6.20 (.244)
Drain
20.80 (.819) 21.46 (.845)
Drain
25.48 (1.003) 26.49 (1.043)
4.50 (.177) Max.
0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123)
3-2006
19.81 (.780) 20.32 (.800)
1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
2.29 (.090) 2.69 (.106)
2.29 (.090) 2.69 (.106)
Gate Drain Source
0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118)
19.81 (.780) 21.39 (.842)
Gate Drain Source
050-5850 Rev A
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125)
5.45 (.215) BSC 2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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